{"created":"2023-05-15T08:43:49.028483+00:00","id":8908,"links":{},"metadata":{"_buckets":{"deposit":"ae81dada-2656-4a9f-9a7c-ba9ae9fce37b"},"_deposit":{"created_by":13,"id":"8908","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"8908"},"status":"published"},"_oai":{"id":"oai:uec.repo.nii.ac.jp:00008908","sets":["6"]},"author_link":["24269","24270","24271","24268","24266","24272","24267"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-03-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageStart":"123:268","bibliographicVolumeNumber":"123","bibliographic_titles":[{},{"bibliographic_title":"Applied Physics A","bibliographic_titleLang":"en"}]}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We fabricated a single-electron (SE) device using gold nanoparticles (Au NPs). Drain, source, and gate electrodes on a SiO2/Si substrate were formed using electron beam lithography (EBL) and thermal evaporation of Au. Subsequently, solutions of 3-nm-diameter and 5-nm-diameter Au NPs were dropped on the device to make current paths through Au NPs among the electrodes. Measurements of the device exhibited negative differential resistance (NDR) in the current-voltage characteristics between the drain and source electrodes at room temperature (298 K). The NDR behavior was tuned by applying a gate voltage.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer Nature"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1007/s00339-017-0891-8","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1007/s00339-017-0891-8","subitem_relation_type_select":"DOI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2017 Springer Nature"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0947-8396","subitem_source_identifier_type":"ISSN"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Huong, Tran Thi Thu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Matsumoto, Kazuhiko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Moriya, Masataka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shimada, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimura, Yasuo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hirano-Iwata, Ayumi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mizugaki, Yoshinao","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-01-18"}],"displaytype":"detail","filename":"GateTunedNegative.pdf","filesize":[{"value":"562.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"GateTunedNegative","url":"https://uec.repo.nii.ac.jp/record/8908/files/GateTunedNegative.pdf"},"version_id":"26b43e0c-d9cf-49e1-b768-492dd2db0e9b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Single-electron device","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Negative differential resistance","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Gold nanoparticles","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"13","path":["6"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-18"},"publish_date":"2019-01-18","publish_status":"0","recid":"8908","relation_version_is_last":true,"title":["Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2023-05-15T10:32:14.978472+00:00"}