@article{oai:uec.repo.nii.ac.jp:00008908,
 author = {Huong, Tran Thi Thu and Matsumoto, Kazuhiko and Moriya, Masataka and Shimada, Hiroshi and Kimura, Yasuo and Hirano-Iwata, Ayumi and Mizugaki, Yoshinao},
 issue = {4},
 journal = {Applied Physics A},
 month = {Mar},
 note = {We fabricated a single-electron (SE) device using gold nanoparticles (Au NPs). Drain, source, and gate electrodes on a SiO2/Si substrate were formed using electron beam lithography (EBL) and thermal evaporation of Au. Subsequently, solutions of 3-nm-diameter and 5-nm-diameter Au NPs were dropped on the device to make current paths through Au NPs among the electrodes. Measurements of the device exhibited negative differential resistance (NDR) in the current-voltage characteristics between the drain and source electrodes at room temperature (298 K). The NDR behavior was tuned by applying a gate voltage.},
 title = {Gate-tuned negative differential resistance observed at room temperature in an array of gold nanoparticles},
 volume = {123},
 year = {2017}
}