@misc{oai:uec.repo.nii.ac.jp:00001166,
 author = {稲, 秀樹 and Ina, Hideki},
 month = {2016-09-16},
 note = {2007, The principle of most of alignment systems for optical lithography is based on image processingof target alignment marks on the wafer under bright-field illumination. To satisfy the increasingdemand for extremely tight overlay accuracy in semiconductor manufacturing processes, all themeasurement error factors in alignment measurement system need be identified and eliminated. Theobjective of this dissertation is to improve the accuracy of wafer alignment in semiconductorexposure tools for optical lithography.Chapter 1 describes the background and the outline of this study. For preliminaries, thestate-of-art and future semiconductor manufacturing technologies are introduced referring toInternational Technology Roadmap for Semiconductors (ITRS), and the process of semiconductormanufacturing and lithography technologies are reviewed.Chapter 2 also serves as preliminaries to provide knowledge relevant to the subjects of thedissertation. Explanations are given on a semiconductor exposure tool called as a stepper or ascanner, wafer measurement systems, a focus measurement system, an alignment measurementsystem, and the sequence of semiconductor exposure. Finally, to clarify the issues to be discussed,error factors of alignment measurement system are identified and categorized.Chapter 3 and Chapter 4 constitute the main part of the dissertation, and describe the mostimportant outcome of this thesis work. In Chapter 3, error analysis is given to the alignmentmeasurement system of a semiconductor exposure tool. First, an overlay error budget is discussed andthe required accuracy of overlay is quantified. Then, error analysis is given to Tool Induced Shift（TIS）and Wafer Induced Shift（WIS）, and the importance of TIS-WIS interaction is clarified. Asimple physical model is proposed that can explain the behavior of TIS, and the results ofexperiments and simulations are presented that demonstrate the validity of the proposed model. InChapter 4, new improvement methods are proposed that can solve not only the TIS problem but alsothe WIS problem. As a solution to the TIS problem, a new criterion is proposed to quantify bothcomatic aberrations and the deviation from illumination telecentricity in alignment optics. To solvethe WIS problem, asymmetry of an alignment mark is quantified, and offset control for the alignmentmeasurement system of semiconductor exposure tool is determined by using an atomic forcemicroscope and an optical simulator. This method is referred to as Alignment Offset Analyzer.Finally Chapter 5 gives the summary and the conclusions of the dissertation.},
 title = {リソグラフィー用半導体露光装置におけるウエハアライメント計測の高精度化の研究},
 year = {},
 yomi = {イナ, ヒデキ}
}