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Efficient host excitation in thiosilicate phosphors of lanthanide(III)-doped Y4(SiS4)3
https://uec.repo.nii.ac.jp/records/9052
https://uec.repo.nii.ac.jp/records/9052b3bdb37a-9be3-42ab-8350-a0358953c594
名前 / ファイル | ライセンス | アクション |
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20190403uecripojitoriLa6Si4S17_draft_revised_ver180207 (2.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-04-03 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Efficient host excitation in thiosilicate phosphors of lanthanide(III)-doped Y4(SiS4)3 | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題 | lanthanide | |||||
キーワード | ||||||
言語 | en | |||||
主題 | luminescence | |||||
キーワード | ||||||
言語 | en | |||||
主題 | phosphor | |||||
キーワード | ||||||
言語 | en | |||||
主題 | sulfide | |||||
キーワード | ||||||
言語 | en | |||||
主題 | thiosilicate | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Nanai, Yasushi
× Nanai, Yasushi× Suzuki, Yousuke× Okuno, Tsuyoshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Lanthanide (Ln)-doped yttrium thiosilicate (Y1−x Ln x )4(SiS4)3 is synthesized, and its optical properties are studied. In (Y1−x Tb x )4(SiS4)3, the green photoluminescence band corresponding to the intra 4f transition of 5D4 → 7F5 appears at 545 nm and becomes the maximum for x = 0.2 in the range x = 0.01 to 1. The internal quantum efficiency is higher (11% for x = 0.01) for the thiosilicate host excitation (360 nm) than for the direct excitation (1.6%) of the intra 4f transition of 5D4 ← 7F6 (489 nm). A time-resolved photoluminescence study shows that the luminescence of defect states of thiosilicate hosts decays faster (typically 10–30 ns) for higher Tb3+ concentration x. In addition, the rise time of Tb3+ photoluminescence is shorter (10–40 ns) for greater x. Energy transfer from the thiosilicate host to Tb3+ is discussed using these results. For all of (Y1−x Ln x )4(SiS4)3 (x = 0.01, Ln = Pr, Nd, Dy, Er or Tm), the internal quantum efficiency is higher for the host excitation (11–21%) than for the direct excitation of intra 4f transitions (1.1–12%). A photoluminescence excitation study reveals broad host absorption in 300–400 nm for Ln luminescence. These results show the promising characteristics of the host absorption of (Y1−x Ln x )4(SiS4)3 phosphors and their optical properties. | |||||
書誌情報 |
en : Journal of Physics D: Applied Physics 巻 49, 号 10, p. 105103, 発行日 2016-03-16 |
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出版者 | ||||||
出版者 | IOP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-3727 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1088/0022-3727/49/10/105103 | |||||
権利 | ||||||
権利情報 | © 2016 IOP Publishing Ltd Printed in the UK | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1088/0022-3727/49/10/105103 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |