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Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles
https://uec.repo.nii.ac.jp/records/8904
https://uec.repo.nii.ac.jp/records/8904ef38112c-0a3e-4215-9112-6e74a8ffc315
名前 / ファイル | ライセンス | アクション |
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FabricationOfResistive (741.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-01-18 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題 | Coulomb blockade (CB) | |||||
キーワード | ||||||
言語 | en | |||||
主題 | gold nanoparticles (Au NPs) | |||||
キーワード | ||||||
言語 | en | |||||
主題 | single-electron transistor (SET) | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Huong, Tran Thi Thu
× Huong, Tran Thi Thu× Matsumoto, Kazuhiko× Moriya, Masataka× Shimada, Hiroshi× Kimura, Yasuo× Hirano-Iwata, Ayumi× Mizugaki, Yoshinao |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current–voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET. | |||||
書誌情報 |
en : Applied Physics A 巻 123, 号 8, p. 123:557, 発行日 2017-07-31 |
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出版者 | ||||||
出版者 | Springer Nature | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0947-8396 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1007/s00339-017-1171-3 | |||||
権利 | ||||||
権利情報 | ©2017 Springer Nature | |||||
関連サイト | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1007/s00339-017-1171-3 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |