WEKO3
アイテム
{"_buckets": {"deposit": "cd6af458-01b9-43f7-b452-2fe9251b9fe2"}, "_deposit": {"created_by": 3, "id": "6912", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "6912"}, "status": "published"}, "_oai": {"id": "oai:uec.repo.nii.ac.jp:00006912", "sets": ["57"]}, "author_link": ["16521"], "control_number": "6912", "item_10002_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2009-01-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1-2", "bibliographicPageEnd": "37", "bibliographicPageStart": "33", "bibliographicVolumeNumber": "21", "bibliographic_titles": [{"bibliographic_title": "電気通信大学紀要", "bibliographic_titleLang": "ja"}]}]}, "item_10002_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A tunnel emitter generates an electron emission into the vacuum using a tunnel phenomenon. Itis expected as a miniature cold cathode in a micron size vacuum tube integrated circuit. Thefabrication process and the operation characteristic of tunnel emitter with MIM (Metal-Insulator-Metal) or MIS (Metal-Insulator-Semiconductor) structure have been studied by many investigators.In these, the MIM type is favorable to develop a large size electron emission array, which isapplicable to optical image display panel because of its simple structure and inexpensive fabricationcost. In this article, the process of low current density and long time anodic oxidation of Al filmdeposited on a sapphire substrate in a low temperature dilute ammonium tartrate solution to forman excellent quality thin Al tunnel oxide layer was shown briefly. On the oxide layer, a MIM typetunnel emitter having a 1mm2 emission area was fabricated and the emission characteristics weremeasured in vacuum as a function of oxide thickness.", "subitem_description_type": "Abstract"}]}, "item_10002_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "電気通信大学"}]}, "item_10002_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0915-0935", "subitem_source_identifier_type": "ISSN"}]}, "item_10002_version_type_20": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "宇佐美, 興一", "creatorNameLang": "ja"}, {"creatorName": "ウサミ, コウイチ", "creatorNameLang": "ja-Kana"}, {"creatorName": "Usami, Kouiti", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "16521", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000060017407", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/d/nr/1000060017407"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "9000000087.pdf", "filesize": [{"value": "382.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 382300.0, "url": {"label": "9000000087.pdf", "url": "https://uec.repo.nii.ac.jp/record/6912/files/9000000087.pdf"}, "version_id": "a020e8fc-8e8a-4dee-bd2d-fa6939b3a824"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "微小電子源をつくる -サファイア基板上に作製したMIMトンネルエミッタの特性-", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "微小電子源をつくる -サファイア基板上に作製したMIMトンネルエミッタの特性-", "subitem_title_language": "ja"}, {"subitem_title": "Fabrication Of Miniature Electron Emitter -Electrical Properties of MIM Tunnel Emitters-", "subitem_title_language": "en"}]}, "item_type_id": "10002", "owner": "3", "path": ["57"], "permalink_uri": "https://uec.repo.nii.ac.jp/records/6912", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2010-02-08"}, "publish_date": "2010-02-08", "publish_status": "0", "recid": "6912", "relation": {}, "relation_version_is_last": true, "title": ["微小電子源をつくる -サファイア基板上に作製したMIMトンネルエミッタの特性-"], "weko_shared_id": -1}
微小電子源をつくる -サファイア基板上に作製したMIMトンネルエミッタの特性-
https://uec.repo.nii.ac.jp/records/6912
https://uec.repo.nii.ac.jp/records/6912606de21c-f63b-4dbc-aa69-4980d27154b1
名前 / ファイル | ライセンス | アクション |
---|---|---|
9000000087.pdf (382.3 kB)
|
|
Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2010-02-08 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 微小電子源をつくる -サファイア基板上に作製したMIMトンネルエミッタの特性- | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Fabrication Of Miniature Electron Emitter -Electrical Properties of MIM Tunnel Emitters- | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
宇佐美, 興一
× 宇佐美, 興一 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A tunnel emitter generates an electron emission into the vacuum using a tunnel phenomenon. Itis expected as a miniature cold cathode in a micron size vacuum tube integrated circuit. Thefabrication process and the operation characteristic of tunnel emitter with MIM (Metal-Insulator-Metal) or MIS (Metal-Insulator-Semiconductor) structure have been studied by many investigators.In these, the MIM type is favorable to develop a large size electron emission array, which isapplicable to optical image display panel because of its simple structure and inexpensive fabricationcost. In this article, the process of low current density and long time anodic oxidation of Al filmdeposited on a sapphire substrate in a low temperature dilute ammonium tartrate solution to forman excellent quality thin Al tunnel oxide layer was shown briefly. On the oxide layer, a MIM typetunnel emitter having a 1mm2 emission area was fabricated and the emission characteristics weremeasured in vacuum as a function of oxide thickness. | |||||
書誌情報 |
ja : 電気通信大学紀要 巻 21, 号 1-2, p. 33-37, 発行日 2009-01-15 |
|||||
出版者 | ||||||
出版者 | 電気通信大学 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0915-0935 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |